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| SHINDENGEN 3 Phase Bridge Diode Diode Module S10VTA80 800V 10A FEATURES Dual In-Line Package Compact 3 phase bridge High IFSM Applicable to mount on glass-epoxy substrate OUTLINE DIMENSIONS Case : 2F: SVTA Case (Unit : mm) (VTA type) APPLICATION Big Power Supply Air conditioner Factory Automation, Inverter RATINGS Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load With heatsink Tc=137 Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque Ratings -40150 150 800 10 150 80 2 0.8 Unit V A A A2s kV Nm IFSM 2 50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode Tj=25 I t 1mst10msc=25 Vdis Terminals to case, AC 1 minute TOR Recommended torque : 0.6Nm Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions VF IF=3.5A, Pulse measurement, Rating of per diode Forward Voltage Reverse Current Thermal Resistance Ratings Max.1.05 Max.10 Unit V A IR jc VR=VRM, Pulse measurement, Rating of per diode junction to case Max.0.65 /W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S10VTA80 100 Forward Voltage 10 Forward Current IF [A] Tc=150C [TYP] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage VF [V] S10VTA80 70 Forward Power Dissipation Forward Power Dissipation PF [W] 60 50 40 SIN 30 20 10 0 0 4 8 12 16 20 24 28 Average Rectified Forward Current IO [A] Tj = 150C Sine wave S10VTA80 14 Derating Curve Average Rectified Forward Current IO [A] 12 10 8 6 + 4 Tc 2 Heastink - 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] Sine wave R-load with heatsink S10VTA80 350 Peak Surge Forward Capability IFSM 10ms 10ms 300 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 250 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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